AON7902 参数 Datasheet PDF下载

AON7902

Q2 Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

I

D

=10mA, V

GS

=0V

V

DS

=30V, V

GS

=0V

C

T

J

=55°

V

DS

=0V, V

GS

= ±12V

V

DS

=V

GS

I

D

=250µA

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=13A

R

DS(ON)

g

FS

V

SD

I

S

Static Drain-Source On-Resistance

V

GS

=4.5V, I

D

=10A

Forward Transconductance

Diode Forward Voltage

V

DS

=5V, I

D

=13A

I

S

=1A,V

GS

=0V

G

Min

30

Typ

Max

Units

V

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BV

DSS

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

0.5

500

100

1.1

150

5.1

C

T

J

=125°

7.4

5.7

50

0.4

0.7

40

2800

3500

520

260

1.2

28

9

11

8

4200

680

450

1.8

34

6.2

9

7.4

1.6

2.1

mA

nA

V

A

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V

GS

=0V, V

DS

=0V, f=1MHz

V

GS

=0V, V

DS

=15V, f=1MHz

360

150

0.6

22

SWITCHING PARAMETERS

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

I

F

=13A, dI/dt=500A/µs

2

V

GS

=10V, V

DS

=15V, I

D

=13A

V

GS

=10V, V

DS

=15V, R

L

=1.2Ω,

R

GEN

=3Ω

10

16

5

50

8

13

21

16

26

Body Diode Reverse Recovery Charge I

F

=13A, dI/dt=500A/µs

ns

nC

A. The value of R

θJA

is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25° The

C.

Power dissipation P

DSM

is based on R

θJA

and the maximum allowed junction temperature of 150° The value in any given application depends

C.

on the user's specific board design.

C,

B. The power dissipation P

D

is based on T

J(MAX)

=150° using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150° Ratings are based on low frequency and duty cycles to keep

initial T

J

=25°

C.

D. The R

θJA

is the sum of the thermal impedence from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of T

J(MAX)

=150° The SOA curve provides a single pulse ratin g.

C.

G. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°

C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

6/11

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