AON7611
30V Complementary MOSFET
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-5A
8
600
Capacitance (pF)
-V
GS
(Volts)
6
500
400
300
C
oss
200
2
100
0
0
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
10
0
0
C
rss
10
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
iss
800
700
4
100.0
200
10µs
10.0
T
C
=25°C
150
-I
D
(Amps)
1.0
1ms
10ms
DC
T
J(Max)
=150°C
T
C
=25°C
0.1
Power (W)
R
DS(ON)
limited
100µs
100
50
0.0
0.01
0.1
1
-V
DS
(Volts)
10
100
0
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJC
.R
θJC
R
θJC
=6.0°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
P
D
T
on
T
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
9 / 11
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