AON7611
30V Complementary MOSFET
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=4A
8
Capacitance (pF)
300
250
200
150
100
C
oss
50
0
0
2
3
4
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1
5
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
iss
V
GS
(Volts)
6
4
2
0
100
200
T
C
=25°C
10
10µs
Power (W)
160
I
D
(Amps)
R
DS(ON)
limited
1
100µs
1ms
10ms
120
80
0.1
T
J(Max)
=150°C
T
C
=25°C
DC
40
0.01
0.01
0.1
1
V
DS
(Volts)
10
100
0
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJC
.R
θJC
1
R
θJC
=18°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
P
D
T
on
T
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4 / 11
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