AON6416
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
di/dt=800A/µs
20
15
10
5
0
0
5
10
15
20
25
30
Q
rr
I
rm
25ºC
2
0
2
25ºC
0
0
5
10
15
20
25
30
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
15
I
s
=20A
8
25ºC
10
Q
rr
5
I
rm
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
0
1000
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
125ºC
4
2
6
12
125ºC
I
rm
(A)
t
rr
(ns)
9
6
3
125º
25ºC
S
25ºC
25ºC
0.5
0
1000
t
rr
1.5
1
S
2
2.5
0
125ºC
12
10
8
Q
rr
(nC)
I
rm
(A)
25ºC
125ºC
t
rr
(ns)
6
4
12
10
8
6
4
S
t
rr
25ºC
1.5
125ºC
1
0.5
di/dt=800A/µs
125ºC
3
2.5
2
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
20
I
s
=20A
15
Q
rr
(nC)
125ºC
10
6/7
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S
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