AON6416
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
110
100
90
80
70
I
D
(A)
60
50
40
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
18
Normalized On-Resistance
16
14
R
DS(ON)
(m
Ω
)
12
10
8
6
4
2
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
5
10
V
GS
=10V
V
GS
=4.5V
1.6
V
GS
=10V
I
D
=20A
V
GS
=3.5V
0
0
1
2
3
4
5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
20
4V
125°
C
25°
C
4.5V
I
D
(A)
10V
6V
7V
5V
60
80
100
V
DS
=5V
40
1.4
1.2
1
17
5
V
GS
=4.5V
2
I
D
=20A
10
0.8
0
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
50
30
I
D
=20A
25
20
15
125°
C
10
5
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
I
S
(A)
1.0E+02
1.0E+01
1.0E+00
40
R
DS(ON)
(m
Ω
)
1.0E-01
1.0E-02
1.0E-03
125°
C
25°
C
25°
C
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/7
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