AON6407
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-20A
8
Capacitance (pF)
4000
C
iss
5000
-V
GS
(Volts)
6
3000
4
2000
C
oss
2
1000
C
rss
0
0
10
20
30
40
50
60
70
80
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1000.0
100.0
-I
D
(Amps)
R
DS(ON)
limited
10.0
1.0
0.1
0.0
0.01
0.1
1
-V
DS
(Volts)
10
100
T
J(Max)
=150°C
T
C
=25°C
DC
10µs
400
350
10µs
Power (W)
100µs
1ms
10ms
300
250
200
150
100
50
0
0
0
10
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
T
J(Max)
=150°C
T
C
=25°C
17
5
2
10
0.0001
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.5°C/W
1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
0.001
0.01
0.1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
I
AS
E
AS
0.1
P
D
T
on
Single Pulse
T
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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