AON6407
30V P-Channel MOSFET
General Description
The AON6407 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch and battery protection applications.
Features
V
DS
I
D
(at V
GS
= -10V)
R
DS(ON)
(at V
GS
= -10V)
R
DS(ON)
(at V
GS
= -6V)
-30
-85A
< 4.5mΩ
< 6.0mΩ
Top View
1
2
3
4
D
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
-30
±25
-85
-67
-200
-32
-25.5
45
101
83
33
7.3
4.7
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14
40
1.1
Max
17
55
1.5
Units
°
C/W
°
C/W
°
C/W
1/6
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