AON6404
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
20
40
60
80
100
120
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=20A
Capacitance (pF)
12000
10000
8000
6000
4000
2000
0
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
C
iss
1000
R
DS(ON)
limited
100000
T
J(Max
)
=150°C
T
C
=25°C
I
D
(Amps)
100
10us
100us
DC
Power (W)
10000
1000
10
T
J(Max)
=150°C
T
C
=25°C
1
0.1
1
10
1ms
10ms
100
100
10
1.00E-06
1.00E-04
1.00E-02
1.00E+00
V
DS
(Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Case (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJc
.R
θJc
R
θJC
=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
T
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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