AON6404
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
140
120
100
I
D
(A)
80
60
40
3V
20
2V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
3.5
V
GS
=4.5V
3
R
DS(ON)
(m
Ω
)
Normalized On-Resistance
1.6
I
D
=20A
1.4
1.2
V
GS
=4.5V
1
0.8
0.6
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100
125
150
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
6
I
D
=20A
5
R
DS(ON)
(m
Ω
)
1.E+01
1.E+00
4
I
S
(A)
1.E-01
1.E-02
1.E-03
2
25°C
1
2
5
8
11
14
17
20
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.E-04
1.E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
25°C
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=10V
0
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
20
3.5V
I
D
(A)
V
GS
=10V,6V,4.5V,4V
80
100
V
DS
=5V
60
125°C
25°C
40
2.5
2
V
GS
=10V
1.5
1.E+02
3
125°C
3/6
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