AON5820
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=20V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
=±10V
V
DS
=V
GS,
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=10A
C
T
J
=125°
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.0V, I
D
=10A
V
GS
=3.5V, I
D
=9A
V
GS
=3.1V, I
D
=9A
V
GS
=2.5V, I
D
=8A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=10A
I
S
=1A,V
GS
=0V
0.3
85
5.5
8
5.8
6
6.3
6.8
7.4
11
7.6
8
8.3
9.2
65
0.58
1
2.5
1000
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
10
V
GS
=4.5V, V
DS
=10V, I
D
=10A
150
100
1255
220
168
2.5
12.5
5.5
6.5
1.1
V
GS
=4.5V, V
DS
=10V, R
L
=1Ω,
R
GEN
=3Ω
I
F
=10A, dI/dt=500A/µs
8.5
12
2.6
7
7.4
11
15
13.5
18
15
1510
290
235
9.5
14
10
10.5
11.5
13
0.65
Min
20
1
5
10
1.0
Typ
Max
Units
V
µA
µA
V
A
mΩ
mΩ
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
KΩ
nC
nC
nC
µs
µs
µs
µs
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=10A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
2/6
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