AON5820 参数 Datasheet PDF下载

AON5820

20V Common-Drain Dual N-Channel MOSFET

General Description

The AON5820 uses advanced trench technology to provide excellent R

DS(ON),

low gate charge and operation

with gate voltages as low as 2.5V while retaining a 12V V

GS(MAX)

rating It is ESD protected. This device is suitabl e

for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.

Product Summary

V

DS

I

D

(at V

GS

=4.5V)

R

DS(ON)

(at V

GS

=4.5V)

R

DS(ON)

(at V

GS

=4.0V)

R

DS(ON)

(at V

GS

=3.5V)

R

DS(ON)

(at V

GS

=3.1V)

R

DS(ON)

(at V

GS

=2.5V)

Typical ESD protection

20V

10A

< 9.5mΩ

< 10mΩ

< 10.5mΩ

< 11.5mΩ

< 13mΩ

HBM Class 2

D1

D2

G1

G2

S1

S2

Absolute Maximum Ratings T

A

=25° unless otherwise noted

C

Parameter

Symbol

Drain-Source Voltage

V

DS

Gate-Source Voltage

Continuous Drain

Current

Pulsed Drain Current

C

T

A

=25°

C

Power Dissipation

A

Maximum

20

±12

10

8

85

1.7

1

-55 to 150

Units

V

V

A

V

GS

T

A

=25°

C

T

A

=70°

C

I

D

I

DM

T

A

=70°

C

P

DSM

T

J

, T

STG

W

°

C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A

Maximum Junction-to-Ambient

A D

Maximum Junction-to-Case

Symbol

t

≤

10s

Steady-State

Steady-State

R

θJA

R

θJC

Typ

30

61

4.5

Max

40

75

5.5

Units

°

C/W

°

C/W

°

C/W

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