AON4605
30V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10V
12
7V
9
I
D
(A)
3.5V
6
I
D
(A)
6
4.5V
4V
8
10
V
DS
=5V
4
125°
C
3
V
GS
=3V
2
25°
C
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
70
Normalized On-Resistance
0
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
2
1.8
1.6
1.4
1.2
1
0.8
V
GS
=4.5V
I
D
=3A
V
GS
=10V
I
D
=4.5A
60
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
50
40
V
GS
=10V
17
5
2
10
30
0
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
2
4
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
0
25
50
120
I
D
=4.5A
1.0E+02
1.0E+01
100
R
DS(ON)
(m
Ω
)
125°
C
80
I
S
(A)
1.0E+00
1.0E-01
1.0E-02
25°
C
1.0E-03
1.0E-04
20
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-05
0.0
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.2
0.4
125°
C
25°
C
40
60
40
3/9
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