AON4605
30V Complementary MOSFET
General Description
The AON4605 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Features
N-Channel
V
DS
= 30V
I
D
= 4.3A (V
GS
=10V)
R
DS(ON)
< 50m
< 70m
(V
GS
=10V)
(V
GS
=4.5V)
P-Channel
-30V
-3.4A (V
GS
=-10V)
R
DS(ON)
< 110m
< 180m
(VGS=-10V)
(VGS=-4.5V)
D1
Top View
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D2
D1
D1
D2
D2
G1
S1
G2
S2
n-channel
p-channel
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
30
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Max p-channel
-30
±20
-3.4
-2.7
-13
1.9
1.2
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
±20
4.3
3.4
18
1.9
1.2
-55 to 150
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
51.5
82
40
Max
65
100
50
Units
°
C/W
°
C/W
°
C/W
1/9
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
