AON3816
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
30
3V
4V
15
20
V
DS
=5V
I
D
(A)
I
D
(A)
20
2V
10
10
V
GS
=1.5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
5
125°C
25°C
0
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
30
Normalized On-Resistance
25
R
DS(ON)
(mΩ)
Ω
20
15
10
V
GS
=4.5V
5
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
V
GS
=3.1V
V
GS
=2.5V
1.8
V
GS
=2.5V I
D
=4A
1.6
V
GS
=4V I
D
=4A
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
17
V
GS
=4.5V I
D
=4A
5
2
10
40
35
30
R
DS(ON)
(mΩ)
Ω
I
S
(A)
25
20
15
10
5
0
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
25°
125°
I
D
=4A
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°
25°
40
3/5
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