AON3816
20V N-Channel MOSFET
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=20V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±10V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=4A
R
DS(ON)
Static Drain-Source On-Resistance
C
T
J
=125°
V
GS
=4V, I
D
=4A
V
GS
=2.5V, I
D
=4A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=4A
I
S
=1A,V
GS
=0V
0.3
40
18
23
19
22.5
33
0.6
1
3.5
730
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
8.8
V
GS
=4.5V, V
DS
=10V, I
D
=4A
1.6
1.9
V
GS
=5V, V
DS
=10V, R
L
=2.5Ω,
R
GEN
=3Ω
2
Min
20
Typ
Max
Units
V
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
1
5
10
0.7
1.1
22
29
23
28
µA
µA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
kΩ
Maximum Body-Diode Continuous Current
920
155
75
2.4
11
2
3.2
0.3
0.6
7.9
4.4
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1100
200
105
110
45
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
13
2.4
4.5
nC
nC
nC
µs
µs
µs
µs
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The SOA curve provides a single pulse rating.
F. The power dissipation and current rating is based on the t
≤
10s thermal resistance, and current rating is also limited by wire-bonding.
2/5
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