AON3402
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
0
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=10V
I
D
=12A
Capacitance (pF)
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
C
rss
C
iss
100.0
40
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
Power (W)
100µs
1ms
10ms
10µs
30
10.0
I
D
(Amps)
20
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
1s
0.1s
10
10s
DC
10
V
DS
(Volts)
100
0
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=80°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.01
P
D
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4/4
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