AON3402
20V N-Channel MOSFET
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=16V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
=±10V
V
DS
=0V, I
G
=±250uA
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=12A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°
C
V
GS
=2.5V, I
D
=10.5A
V
GS
=1.8V, I
D
=8.5A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=12A
I
S
=1A,V
GS
=0V
±12
0.5
40
10.3
14.4
14.3
21.7
37
0.73
1
4.8
1810
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
232
200
1.6
17.9
V
GS
=4.5V, V
DS
=10V, I
D
=12A
1.5
4.7
2.5
V
GS
=10V, V
DS
=10V, R
L
=1.0Ω,
R
GEN
=3Ω
I
F
=12A, dI/dt=100A/µs
7.2
49
10.8
20.2
8
13
18
17
26
0.78
1
Min
20
10
25
10
Typ
Max
Units
V
µA
µA
V
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Total Gate Charge
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=12A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev2: Nov. 2010
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The SOA
C.
2/4
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