AOL1401
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
60
50
Power Dissipation (W)
90
40
Power (W)
60
30
20
10
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 12: Power De-rating (Note B)
0
0.01
T
A
=25°C
30
0.1
1
10
100
1000
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-
Ambient (Note H)
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Current rating -I
D
(A)
100
Z
θ
JA
Normalized Transient
Thermal Resistance
10
1
0.1
0.01
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
P
D
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
4.9
6
5/6
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