AOL1401
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-20V
I
D
=-20A
Capacitance (pF)
5000
C
iss
4000
8
-V
GS
(Volts)
6
3000
4
2000
C
oss
1000
C
rss
2
0
0
10
30
40
50
60
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
20
70
0
0
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
1000.0
T
J(Max)
=175°C, T
A
=25°C
100.0
-I
D
(Amps)
10µs
Power (W)
R
DS(ON)
limited
100µs
1ms
10ms
1.0
DC
100m
1000
800
600
400
200
0
0.0001
T
J(Max)
=175°C
T
A
=25°C
10.0
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
10
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note B)
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.01
0.00001
P
D
T
on
T
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4.9
6
4/6
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