AOK18N65
650V,18A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=520V
I
D
=18A
Capacitance (pF)
1000
C
oss
10000
C
iss
12
V
GS
(Volts)
9
6
100
C
rss
3
0
0
40
60
80
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
20
100
10
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
20
100
R
DS(ON)
limited
Current rating I
D
(A)
15
I
D
(Amps)
10
10µs
100µs
1ms
10
1
DC
0.1
10ms
5
T
J(Max)
=150°C
T
C
=25°C
0
0
25
50
75
100
125
150
(°C)
T
CASE
(°C)
Figure 9: Current De-rating (Note B)
0.01
1
100
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOK18N65 (Note F)
10
1000
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOK18N65 (Note F)
T
on
T
4/5
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