AOK18N65
650V,18A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
30
100
V
DS
=40V
-55°C
6V
10
I
D
(A)
I
D
(A)
20
5.5V
125°C
1
10
V
GS
=5V
25°C
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
0.6
Normalized On-Resistance
0.1
0
4
6
8
V
GS
(Volts)
Figure 2: Transfer Characteristics
2
10
3
2.5
2
1.5
1
0.5
0
0
10
20
30
40
-100
-50
0
50
100
150
200
V
GS
=10V
I
D
=9A
0.5
R
DS(ON)
(Ω)
Ω
V
GS
=10V
0.4
0.3
0.2
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.0E+02
1.0E+01
BV
DSS
(Normalized)
1.1
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
1.0E+00
I
S
(A)
1
1.0E-01
1.0E-02
0.9
1.0E-03
0.8
-100
-50
0
50
100
150
200
T
J
(°C)
Figure 5:Break Down vs. Junction Temparature
1.0E-04
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
25°C
3/5
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