AOD409/AOI409
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
-I
D
(A)
15
-3.5V
10
5
V
GS
=-3V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
50
Normalized On-Resistance
40
R
DS(ON)
(m
Ω
)
V
GS
=-4.5V
30
V
GS
=-10V
20
10
0
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
5
10
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
2
1.8
1.6
1.4
1.2
1
V
GS
=-4.5V
I
D
=-20A
V
GS
=-10V
I
D
=-20A
0
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
10
25°C
5
-10V
-4.5V
-6V
-5V
-I
D
(A)
-4V
30
25
20
15
125°C
V
DS
=-5V
80
125°C
I
D
=-20A
1.0E+01
1.0E+00
1.0E-01
125°C
60
R
DS(ON)
(m
Ω
)
-I
S
(A)
25°C
40
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
20
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
25°C
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
3/6
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