AOI409 参数 Datasheet PDF下载

AOD409/AOI409

P-Channel Enhancement Mode Field

Effect Transistor

Electrical Characteristics (T

J

=25°C unless otherwise noted)

Symbol

Parameter

Conditions

I

D

=-250µA, V

GS

=0V

V

DS

=-48V, V

GS

=0V

T

J

=55°C

V

DS

=0V, V

GS

=±20V

V

DS

=V

GS

I

D

=-250µA

V

GS

=-10V, V

DS

=-5V

V

GS

=-10V, I

D

=-20A

R

DS(ON)

g

FS

V

SD

I

S

Static Drain-Source On-Resistance

V

GS

=-4.5V, I

D

=-20A

Forward Transconductance

V

DS

=-5V, I

D

=-20A

Diode Forward Voltage

I

S

=-1A,V

GS

=0V

Maximum Body-Diode Continuous Current

T

J

=125°C

-1.2

-60

32

53

43

32

-0.73

-1

-30

2977

V

GS

=0V, V

DS

=-30V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

241

153

2

44

V

GS

=-10V, V

DS

=-30V, I

D

=-20A

22.2

9

10

12

V

GS

=-10V, V

DS

=-30V, R

L

=1.5Ω,

R

GEN

=3Ω

I

F

=-20A, dI/dt=100A/µs

14.5

38

15

40

59

50

2.4

54

28

3600

55

40

-1.9

Min

-60

-0.003

-1

-5

±100

-2.4

Typ

Max

Units

V

µA

nA

V

A

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

nC

ns

ns

ns

ns

ns

nC

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=-20A, dI/dt=100A/µs

A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

Power dissipation PDSM is based on R

θJA

and the maximum allowed junction temperature of 150°C. The value in any a given application depends

on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on T

J(MAX)

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=175°C.

D. The R

θJA

is the sum of the thermal impedence from junction to case R qJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T

J(MAX)

=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The SOA

curve provides a single pulse rating.

*This device is guaranteed green after data code 8X11 (Sep 1

ST

2008).

Rev 5: Jan 2011

2/6

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