AOD7N60/AOI7N60
600V,7A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=480V
I
D
=3.5A
Capacitance (pF)
10000
C
iss
1000
C
oss
100
C
rss
10
3
12
V
GS
(Volts)
9
6
0
0
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
30
1
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
100
10µs
10
I
D
(Amps)
R
DS(ON)
limited
Power (W)
100µs
DC
1ms
10ms
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1000
1000
T
J(Max)
=150°C
T
C
=25°C
800
600
1
400
200
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.7°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
P
D
T
on
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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