AOD7N60 参数 Datasheet PDF下载

AOD7N60/AOI7N60

600V,7A N-Channel MOSFET

General Description

The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed

to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low R

DS(on)

, C

iss

and C

rss

along with guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply designs.

Features

V

DS

I

D

(at V

GS

=10V)

R

DS(ON)

(at V

GS

=10V)

700V@150℃

7A

< 1.3Ω

D

G

S

Absolute Maximum Ratings T

A

=25° unless otherwise noted

C

Parameter

Symbol

Drain-Source Voltage

V

DS

Gate-Source Voltage

Continuous Drain

Current

B

Pulsed Drain Current

Avalanche Current

C

C

H

C

Maximum

600

±30

7

4.5

24

3.6

194

388

5

178

1.4

-50 to 150

300

Units

V

V

A

A

mJ

mJ

V/ns

W

W/

o

C

°

C

°

C

V

GS

T

C

=25°

C

T

C

=100°

C

I

D

I

DM

I

AR

E

AR

E

AS

dv/dt

P

D

T

J

, T

STG

T

L

Repetitive avalanche energy

Single pulsed avalanche energy

Peak diode recovery dv/dt

T

C

=25°

C

Power Dissipation

B

Derate above 25

o

C

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A,G

Maximum Case-to-sink

A

Maximum Junction-to-Case

D,F

Symbol

R

θJA

R

θCS

R

θJC

Typical

45

-

0.5

Maximum

55

0.5

0.7

Units

°

C/W

°

C/W

°

C/W

1/6

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