AOD4N60/AOI4N60/AOU4N60
600V,4A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8
10V
7
6
6.5V
5
I
D
(A)
I
D
(A)
4
3
2
1
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
4.5
Normalized On-Resistance
4.0
3.5
R
DS(ON)
(Ω)
Ω
3.0
2.5
2.0
1.5
1.0
0
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
2
4
V
GS
=10V
3
2.5
2
1.5
1
0.5
0
-100
0
50
100
150
Temperature (°
C)
Figure 4: On-Resistance vs. Junction
Temperature
-50
200
V
GS
=10V
I
D
=2A
0.1
2
4
6
8
10
V
GS
(Volts)
Figure 2: Transfer Characteristics
V
GS
=5.5V
6V
10
125°C
1
25°C
100
V
DS
=40V
-55°C
1.2
I
D
=30A
1.0E+02
1.0E+01
BV
DSS
(Normalized)
1.1
40
1.0E+00
I
S
(A)
125°C
1
125°
1.0E-01
25°C
1.0E-02
0.9
25°
1.0E-03
1.0E-04
-100
50
100
150
200
T
J
(
o
C)
Figure 5: Break Down vs. Junction Temperature
-50
0
0.2
0.6
0.8
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.4
1.0
0.8
3/6
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