AOD4N60 参数 Datasheet PDF下载

AOD4N60/AOI4N60/AOU4N60

600V,4A N-Channel MOSFET

Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

STATIC PARAMETERS

BV

DSS

BV

DSS

/∆TJ

I

DSS

I

GSS

V

GS(th)

R

DS(ON)

g

FS

V

SD

I

S

I

SM

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Pulsed Current

420

V

GS

=0V, V

DS

=25V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

35

2.5

1.2

9.5

V

GS

=10V, V

DS

=480V, I

D

=4A

2.8

2.2

V

GS

=10V, V

DS

=300V, I

D

=4A,

R

G

=25Ω

I

F

=4A,dI/dt=100A/µs,V

DS

=100V

150

1.9

I

D

=250µA, V

GS

=0V, T

J

=25°

C

C

I

D

=250µA, V

GS

=0V, T

J

=150°

ID=250µA, VGS=0V

V

DS

=600V, V

GS

=0V

V

DS

=480V, T

J

=125°

C

V

DS

=0V, V

GS

=±30V

V

DS

=5V, I

D

=250µA

V

GS

=10V, I

D

=2A

V

DS

=40V, I

D

=2A

I

S

=1A,V

GS

=0V

3.4

4.1

1.8

6

0.76

4

14

528

53

4.8

2.5

12

3.6

4.4

17

26

34

21

190

2.4

230

3

640

70

7

3.8

14.5

4.5

6.6

1

600

700

0.67

1

10

±100

4.5

2.3

V

V/

o

C

µA

nΑ

V

Ω

S

V

A

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

µC

Parameter

Conditions

Min

Typ

Max

Units

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Total Gate Charge

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=4A,dI/dt=100A/µs,V

DS

=100V

A. The value of R

θJA

is measured with the device in a still air environment with T

A

=25°C.

B. The power dissipation P

D

is based on T

J(MAX)

=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in

setting the upper dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C.

D. The R

θJA

is the sum of the thermal impedance from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs

pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T

J(MAX)

=150°C.

G.These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C.

H. L=60mH, I

AS

=2.8A, V

DD

=150V, R

G

=10Ω, Starting T

J

=25°C

2/6

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