AOD480
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
4
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
8
V
DS
=15V
I
D
=20A
600
500
Capacitance (pF)
400
300
200
100
0
0
C
rss
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
25
C
oss
C
iss
1.4
494
692
593
830
193
18
100
R
DS(ON)
limited
Power (W)
10
I
D
(Amps)
10µs
100
80
60
40
20
0
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
100
T
J(Max)
=175°C
T
C
=25°C
DC
1
T
J(Max)
=175°C
T
C
=25°C
0.1
100µs
1ms
0.0001
0.001
0.01
59
0.1
1
142
Width (s)
Pulse
10
30
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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