AOD480
30V N-Channel MOSFET
General Description
The AOD480 uses advanced trench technology and design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load switching and general purpose applications.
Features
V
DS
(V) = 30V
I
D
= 25A (V
GS
= 10V)
R
DS(ON)
<23 mΩ (V
GS
= 10V)
R
DS(ON)
<33 mΩ (V
GS
= 4.5V)
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
T
C
=25°
C
Continuous Drain
G
T
C
=100°
C
Current
C
Pulsed Drain Current
Avalanche Current
C
C
Maximum
30
±20
25
18
64
12
7
21
11
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°
C
V
GS
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
Repetitive avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16.7
40
4.5
Max
25
50
7
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
