AOD4132
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
10
20
30
40
50
60
70
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=20A
Capacitance (pF)
5000
C
iss
4000
3000
2000
C
oss
1000
C
rss
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
1000
R
DS(ON)
limited
100
10µs
1ms
10ms
0.1s
1s
100µs
Power (W)
60
40
20
0
0.01
80
T
J(Max)
=150°C
T
A
=25°C
100
I
D
(Amps)
10
1
T
J(Max)
=150°C
T
A
=25°C
10s
DC
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
100
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
T
on
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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