AOD4132
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
I
D
(A)
30
3.5V
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
V
GS
=3V
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
4.0V
I
D
(A)
60
10V
50
V
DS
=5V
40
30
20
10
125°C
25°C
8
7
R
DS(ON)
(m
Ω
)
6
5
4
V
GS
=10V
3
2
0
10
20
30
40
50
60
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=4.5V
Normalized On-Resistance
1.6
I
D
=20A
1.4
V
GS
=10V
1.2
V
GS
=4.5V
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
8
1.0E+02
1.0E+01
125°C
6
R
DS(ON)
(m
Ω
)
125°C
I
S
(A)
1.0E+00
1.0E-01
25°C
1.0E-02
1.0E-03
1.0E-04
4
I
D
=20A
25°C
2
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
3/6
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