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AOD410 参数 Datasheet PDF下载

AOD410图片预览
型号: AOD410
PDF下载: 下载PDF文件 查看货源
内容描述: N通道30 -V ( DS ) MOSFET高性能沟道技术 [N-Channel 30-V (D-S) MOSFET High performance trench technology]
分类和应用:
文件页数/大小: 5 页 / 400 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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Freescale
AOD4 10/ MCD4 10
Typical Electrical Characteristics (N-Channel)
100
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
0.1
I
D
= 5.3A
10
1
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125 C
o
R
S N)
, O -R S T N E(O M
N E IS A C
H )
D (O
0.08
25 C
o
0.06
0.04
T
A
= 25
o
C
0.02
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
2.2
-Vth, GATE-SOURCE THRESTHOLD
VOLTAGE (V)
2
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50
75
100
o
Figure 8. On-Resistance with Gate to Source Voltage
VDS = VGS
ID = 250mA
P(pk), PEAK TRANSIENT POWER (W)
50
40
30
20
10
0
0.001
SINGLE PULSE
R
θ
JA = 125
o
C/W
TA = 25
o
C
125
150
175
0.01
0.1
1
t1, TIME (SEC)
10
100
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
0.2
0.1
0.1
0.0
0.02
0.01
0.01
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
t1, TIM E (s e c )
1
10
100
1000
P(p k)
t1
t2
T
J
- T
A
= P * Rq J
A(t )
Duty Cycle, D = t1 / t2
Rq J
A
(t) = r(t) + Rq J A
Rq J A = 1 2 5
o
C/W
Figure 11. Transient Thermal Response Curve
4
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