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AOD410 参数 Datasheet PDF下载

AOD410图片预览
型号: AOD410
PDF下载: 下载PDF文件 查看货源
内容描述: N通道30 -V ( DS ) MOSFET高性能沟道技术 [N-Channel 30-V (D-S) MOSFET High performance trench technology]
分类和应用:
文件页数/大小: 5 页 / 400 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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Freescale
AOD4 10/ MCD4 10
Typical Electrical Characteristics (N-Channel)
40
V
GS
= 10V
I
D
, D R A IN C U R R E N T ( A
30
6.0V
5.0V
30
VDS = 5V
ID, DRAIN CURRENT (A)
25
20
15
10
5
0
0.5
1.5
TA = -55
o
C
25
o
C
125
o
C
20
4.0V
10
3.0V
0
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2.5
3.5
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
R
D S ( O N )
, N O R M A L IZ E D
D R A IN - S O U R C E O N - R E S IS T A N C
V
GS
=
C A P A C IT A N C E ( p F
700
600
500
400
300
200
100
0
C
RSS
0
5
10
15
20
25
30
C
ISS
f = 1MHz
V
GS
= 0 V
2.5
2
4.5V
1.5
1
10V
C
OSS
0.5
0
5
10
15
I
D
, DRAIN CURRENT (A)
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 3. On Resistance Vs Vgs Voltage
Figure 4. Capacitance Characteristics
10
I
D
= 5.3A
15V
1.6
V
GS
= 10V
I
D
= 7A
8
1.4
Vgs Voltage ( V )
6
Normalized R
DS
(on)
0
1
2
3
4
5
1.2
4
1.0
2
0.8
0
0.6
-50
-25
0
25
50
75
100
125
150
Qg, Gate Charge (nC)
T
J
Juncation Temperature (ºC)
Figure 5. Gate Charge Characteristics
Figure 6. On-Resistance Variation with Temperature
3
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