AOD2908
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=50V
I
D
=20A
8
Capacitance (pF)
1600
C
iss
V
GS
(Volts)
6
1200
2000
4
800
C
oss
400
C
rss
2
0
0
8
12
16
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
4
20
0
0
40
60
80
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
100
1000.0
100.0
I
D
(Amps)
10µs
10µs
800
T
J(Max)
=175°C
T
C
=25°C
600
Power (W)
R
DS(ON)
10.0
1.0
100µs
1ms
10ms
DC
T
J(Max)
=175°C
T
C
=25°C
400
17
5
2
10
0.1
0.0
0.01
200
0
1
10
100
1000
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
0.1
0.0001
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
for (Note F)
0.001
0.01
0.1
1
10
100
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
1
R
θJC
=2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
0.01
T
on
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
T
4/6
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