AOD2908
100V N-Channel MOSFET
General Description
The AOD2908 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and switching power losses are minimized due to an extremely
low combination of R
DS(ON)
, Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
100V
52A
< 13.5mΩ
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
I
Maximum
100
±20
52
36
120
150
9
7
20
20
75
37
2.5
1.6
-55 to 175
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
DM
T
A
=25°
C
T
A
=70°
C
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
T
C
=25°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
A
Pulsed Drain Current
J
A
A
mJ
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
15
41
1.5
Max
20
50
2
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
