AOT418L/AOB418L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
240
di/dt=800A/µs
200
160
Q
rr
(nC)
120
80
I
rm
40
0
0
5
10
15
20
25
30
25ºC
Q
rr
125ºC
25ºC
125ºC
40
30
20
10
0
50
35
di/dt=800A/µs
30
25
I
rm
(A)
t
rr
(ns)
20
15
10
5
0
5
10
15
20
25ºC
25
30
t
rr
25ºC
125ºC
3
2.5
2
1.5
1
125ºC
0.5
0
S
S
1
S
25ºC
0
200
400
600
800
0
1000
0.5
S
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
250
I
s
=20A
200
Q
rr
(nC)
150
100
50
I
rm
0
0
200
400
600
800
Q
rr
125º
25ºC
125º
25ºC
40
35
30
25
I
rm
(A)
20
15
10
5
0
1000
50
45
40
35
t
rr
(ns)
30
25
20
15
10
5
0
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
2.5
I
s
=20A
2
125ºC
25ºC
125ºC
t
rr
1.5
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
6/7
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