AOT418L/AOB418L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
7V
60
I
D
(A)
40
5V
20
V
GS
=4.5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
12
Normalized On-Resistance
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
200
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
V
GS
=10V
I
D
=20A
0
2
3
4
5
6
7
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
10V
6V
5.5V
I
D
(A)
100
V
DS
=5V
80
60
40
20
125°C
25°C
10
R
DS(ON)
(mΩ)
V
GS
=7V
8
V
GS
=10V
6
17
5
2
V
GS
=7V
10
I
D
=20A
4
20
I
D
=20A
17
R
DS(ON)
(mΩ)
14
11
25°C
8
5
4
5
6
7
8
9
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+00
I
S
(A)
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
40
125°C
3/7
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