AOT1100L/AOB1100L
100V N-Channel Rugged Planar MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=50V
I
D
=20A
Capacitance (pF)
100000
8
10000
C
iss
V
GS
(Volts)
6
1000
C
oss
100
C
rss
4
2
10
0
0
45
60
75
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
15
30
90
1
0
20
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
40
1000.0
9000
100.0
R
DS(ON)
limited
DC
10µs
10µs
100µs
Power (W)
7500
6000
4500
3000
T
J(Max)
=175°C
T
C
=25°C
I
D
(Amps)
10.0
1ms
10ms
1.0
17
5
2
10
0.1
T
J(Max)
=175°C
T
C
=25°C
0.0
0.01
10
100
1000
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
0.1
1
1500
0
0.01
0.1
1
0
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
18
Case (Note F)
0.0001
0.001
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.3°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
Single Pulse
0.01
1E-05
0.0001
P
D
T
on
T
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.001
1
10
4/6
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