AOT1100L/AOB1100L
100V N-Channel Rugged Planar MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
6V
80
100
V
DS
=5V
60
I
D
(A)
5V
40
I
D
(A)
60
40
20
V
GS
=4.5V
0
0
2
3
4
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
1
5
20
125°C
0
0
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1
2
6
25°C
14
Normalized On-Resistance
2.8
2.4
V
GS
=10V
I
D
=20A
12
R
DS(ON)
(mΩ)
Ω
V
GS
=10V
10
2.0
1.6
8
17
5
2
10
1.2
6
0
24
32
40
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
8
16
0.8
0
25
50
75
100
125
150
175
200
Temperature (°
C)
Figure 4: On-Resistance vs. Junction
(Note E)
0
18
Temperature
24
I
D
=20A
20
R
DS(ON)
(mΩ)
Ω
125°C
I
S
(A)
1E+02
1E+01
1E+00
40
125°C
16
1E-01
25°C
1E-02
1E-03
12
25°C
8
1E-04
4
2.0
6.0
8.0
10.0
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4.0
1E-05
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.0
0.2
3/6
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