AO8820
20V Common-Drain Dual
N-Channel Mosfet
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=10V
I
D
=7A
4
600
3
Capacitance (pF)
V
GS
(Volts)
C
iss
800
400
2
C
oss
200
1
C
rss
0
10
15
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
0
0
4
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
8
0
100.0
10000
10.0
I
D
(Amps)
1ms
1.0
Power (W)
R
DS(ON)
limited
10µs
100µs
T
A
=25°C
1000
10ms
T
J(Max)
=150°C
T
A
=25°C
10s
DC
100
0.1
10
1
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.00001
0.001
0.1
10
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=83°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
T
on
T
4/5
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