AO8820
20V Common-Drain Dual
N-Channel Mosfet
General Description
The AO8820 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V V
GS(MAX)
rating. It is ESD protected. This device is suitable for use
as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=3.6V)
R
DS(ON)
(at V
GS
=2.5V)
R
DS(ON)
(at V
GS
=1.8V)
ESD protected!
D1
Top View
D1/D2
S1
S1
G1
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
D2
20V
7A
< 21mΩ
< 24mΩ
< 28mΩ
< 32mΩ
< 50mΩ
G1
G2
S1
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
20
±12
7
5.5
30
1.5
0.96
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
64
89
53
Max
83
120
70
Units
°
C/W
°
C/W
°
C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
