AO6801E
30V Dual P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-2A
8
Capacitance (pF)
500
450
400
350
300
250
200
150
100
50
0
0
4
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
8
0
0
C
rss
10
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
oss
C
iss
-V
GS
(Volts)
6
4
2
100.0
100
T
A
=25°C
10.0
10µs
100µs
1ms
10ms
Power (W)
-I
D
(Amps)
R
DS(ON)
limited
1.0
10
1
0.1
T
J(Max)
=150°C
T
A
=25°C
DC
0.01
0.1
1
-V
DS
(Volts)
10
10s
0.1
100
1E-05
0.001
0.1
10
1000
0.0
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=230°C/W
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
T
on
T
4/5
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