AO6801E
30V Dual P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
-10V
-4.5V
8
10
-I
D
(A)
-6V
6
-I
D
(A)
10
V
DS
=-5V
-2.5V
5
4
125°C
2
V
GS
=-2.0V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
200
V
GS
=-2.5V
Normalized On-Resistance
180
160
R
DS(ON)
(mΩ)
Ω
140
120
100
80
60
0
4
6
8
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
2
V
GS
=-10V
V
GS
=-4.5V
0
0
1
2
25°C
3
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
V
GS
=-4.5V
I
D
=-1.5A
V
GS
=-10V
I
D
=-2A
17
5
2
V
GS
=-2.5V
10
I
D
=-1A
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
260
240
220
200
R
DS(ON)
(mΩ)
Ω
-I
S
(A)
180
160
140
120
100
80
60
0
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
4
25°C
125°C
I
D
=-2A
1.0E+01
1.0E+00
40
1.0E-01
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
3/5
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