AO6432 参数 Datasheet PDF下载

AO6432

30V N-Channel MOSFET

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

10V

50

40

I

D

(A)

4.5V

30

20

10

0

0

1

2

3

4

5

V

DS

(Volts)

Fig 1: On-Region Characteristics

45

Normalized On-Resistance

40

V

GS

=4.5V

35

R

DS(ON)

(mΩ)

Ω

30

25

20

15

10

0

5

10

15

20

I

D

(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

V

GS

=10V

0.6

0

25

50

I

D

(A)

9

6V

12

V

DS

=5V

V

DS

=5V

15

6

V

GS

=3.5V

3

125°C 125°C

25°C

25°

0

1.5

2

2.5

3

3.5

4

4.5

V

GS

(Volts)

Figure 2: Transfer Characteristics

1.8

1.6

1.4

1.2

1

0.8

V

GS

=10V

Id=7.5A

67

41

1.2

1.8

11

5

V

GS

=4.5V

Id=5.6A

4.5

23

5.5

75

10.5

100

125

12.6

150

4.5

5.4

Temperature (°C)

175

Figure 4: On-Resistance vs. Junction Temperature

60

50

R

DS(ON)

(mΩ)

Ω

40

125°C

I

S

(A)

I

D

=7.5A

1.0E+01

1.0E+00

1.0E-01

125°C

1.0E-02

30

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

1.0E-03

25°C

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF20

SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

1.0E-04

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

25°C

10

1.0E-05

2

4

6

8

10

0.0

0.2

0.4

0.6

0.8

1.0

V

GS

(Volts)

V

SD

(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Figure 6: Body-Diode Characteristics

3/5

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