AO6432
30V N-Channel MOSFET
General Description
The AO6432 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used to bypass the source inductance.
V
DS
(V) = 30V
I
D
= 7.5A
R
DS(ON)
< 24mΩ
R
DS(ON)
< 35mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
D
Top View
D
D
G
1
2
3
6
5
4
D
D
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
A,F
Current
Pulsed Drain Current
B
C
T
A
=25°
Power Dissipation
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
P
D
T
J
, T
STG
V
GS
Maximum
30
±20
7.5
6.0
38
2.0
1.28
-55 to 150
Units
V
V
A
W
°
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
54
Max
62.5
110
68
Units
°
C/W
°
C/W
°
C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
