AO6415
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=-10V
I
D
=-2A
450
Capacitance (pF)
C
iss
300
600
4
-V
GS
(Volts)
3
2
150
1
C
rss
0
C
oss
0
0
2
3
4
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1
5
0
10
15
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
100.0
1000
10µs
10.0
T
J(Max)
=150°C
T
A
=25°C
Power (W)
100
-I
D
(Amps)
R
DS(ON)
limited
100µs
1ms
10ms
100ms
1.0
10
0.1
DC
T
J(Max)
=150°C
T
A
=25°C
10s
1
0.00001
0.001
0.1
10
1000
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.0
0.01
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=140°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
P
D
T
on
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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