AO6415
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
25
20
-I
D
(A)
15
-2.5V
10
V
GS
=-2.0V
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
170
Normalized On-Resistance
V
GS
=-2.5V
0
0
1
2
3
4
3
125°C
25°C
-4.5V
-3.5V
-I
D
(A)
6
9
12
V
DS
=-5V
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.80
1.60
1.40
1.20
1.00
0.80
0
2
6
8
-I
4
(A)
D
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
I
D
=-1A, V
GS
=-2.5V
I
D
=-3.3A, V
GS
=-10V
I
D
=-2A, V
GS
=-4.5V
140
R
DS(ON)
(mΩ)
Ω
110
V
GS
=-4.5V
80
V
GS
=-10V
50
20
180
I
D
=-3.3A
150
R
DS(ON)
(mΩ)
Ω
1.0E+01
1.0E+00
1.0E-01
-I
S
(A)
120
125°C
125°C
1.0E-02
1.0E-03
25°C
90
25°C
60
1.0E-04
1.0E-05
30
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/5
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