AO5804E
Dual N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=10V
I
D
=0.5A
Capacitance (pF)
40
Ciss
60
4
V
GS
(Volts)
3
2
20
C
oss
C
rss
0
5
10
15
20
1
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10.0
14
10µs
Power (W)
1.0
I
D
(Amps)
12
10
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
100µs
1ms
DC
0.1s
8
6
4
2
0
0.0001
0.1
10ms
T
J(Max)
=150°C
T
A
=25°C
1s
10s
10
100
0.0
0.01
0.1
1
V
DS
(Volts)
0.001
0.01
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=450°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.5
0.45
0.28
0.18
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4/5
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
