AO5804E 参数 Datasheet PDF下载

AO5804E

Dual N-Channel Enhancement Mode Field

Effect Transistor

Electrical Characteristics (T

J

=25°C unless otherwise noted)

Symbol

Parameter

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=20V, V

GS

=0V

T

J

=55°C

V

DS

=0V, V

GS

=±4.5V

V

DS

=0V, V

GS

=±8V

V

DS

=V

GS

I

D

=250µA

V

GS

=4.5V, V

DS

=5V

V

GS

=4.5V, I

D

=0.5A

R

DS(ON)

Static Drain-Source On-Resistance

T

J

=125°C

V

GS

=2.5V, I

D

=0.5A

V

GS

=1.8V, I

D

=0.3A

g

FS

V

SD

I

S

Forward Transconductance

Diode Forward Voltage

V

DS

=5V, I

D

=0.5A

I

S

=0.1A,V

GS

=0V

0.45

3

0.4

0.6

0.48

0.6

1.5

0.65

1

0.4

35

V

GS

=0V, V

DS

=10V, f=1MHz

8

6

0.63

V

GS

=4.5V, V

DS

=10V, I

D

=0.5A

0.08

0.16

4.5

V

GS

=5V, V

DS

=10V, R

L

=50Ω,

R

GEN

=3Ω

I

F

=0.5A, dI/dt=100A/µs

3.3

78

32

8

2

10

1

45

0.55

0.85

0.68

0.8

0.6

Min

20

1

5

±1

±100

1

Typ

Max

Units

V

µΑ

µA

µA

V

A

Ω

Ω

Ω

S

V

A

pF

pF

pF

nC

nC

nC

ns

ns

ns

ns

ns

nC

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=0.5A, dI/dt=100A/µs

A: The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The value in

any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

0.5

B: Repetitive rating, pulse width limited by junction temperature.

0.45

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

C. The R

θJA

D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300

µs

pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The SOA curve

0.28

provides a single pulse rating.

0.18

F. The maximum current rating is limited by bond-wires

Rev3: Aug 2008

2/5

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