AO4821
12V Dual P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.5
4
3.5
3
-V
GS
(Volts)
2.5
2
1.5
1
0.5
0
0
10
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
20
400
0
0
C
rss
6
8
10
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
2
4
12
Capacitance (pF)
2000
1600
1200
800
C
oss
V
DS
=-6V
I
D
=-9A
2800
2400
C
iss
100.0
10µs
10.0
-I
D
(Amps)
R
DS(ON)
limited
100µ
1ms
1.0
DC
T
J(Max)
=150°
C
C
T
A
=25°
0.0
0.01
0.1
1
-V
DS
(Volts)
10
100
10ms
10s
Power (W)
10000
T
A
=25°
C
1000
100
0.1
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=90°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
T
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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